Process Applications
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Plasma Nitridation
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- Oxide nitridation
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Plasma Oxidation
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- Gate dielectric
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- Selective oxidation
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- Anisotropic oxidation
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Features
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High Throughput: Doubled productivity compared with conventional solutions
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MMT Plasma Source: Excellent uniform and very low temperature electron plasma at wafer surface (~1eV |
Wide Range Process Temperature: Newly developed high temperature heater
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Expanded Process Applications: Selective oxidation (oxidize silicon but no oxidation on metallic material)
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